Growth and properties of semi-polar GaN on a patterned silicon substrate

Adopting anisotropy etching method, a (111) facet of Si is obtained on a Si substrate and selective area growth (SAG) of GaN is performed with metal-organic vapor phase epitaxy on the facet. The epitaxial lateral overgrowth of (1 (1) over bar 01), (11 (2) over bar2) GaN is investigated on (001) and (113) Si substrate, respectively, and the incorporation properties of Si, C, and Mg elements are discussed in relation to the atomic configuration on the surface. Analyzing the optical and electrical properties of C-doped (1 (1) over bar 0 1) GaN layer, it is shown that carbon creates a shallow acceptor level. On the thus prepared (1 (1) over bar 01) GaN layer, a light emitting diode (LED) with a C-doped p-type layer is fabricated. (C) 2009 Elsevier B.V. All rights reserved.