Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

被引：3
|
作者：
Bessolov, V. N. [1 ]
Konenkova, E. V.
Kukushkin, S. A.
Nikolaev, V. I.
Osipov, A. V.
Sharofidinov, Sh.
Shcheglov, M. P.
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2013年 / 39卷 / 03期
基金：
俄罗斯基础研究基金会;
关键词：
PHASE EPITAXY; GROWTH; SAPPHIRE; SILICON; SI(001);
D O I：
10.1134/S106378501303019X
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The idea of a new method for growing gallium nitride (GaN) epilayers in semi-polar direction by hydride-chloride vapor-phase epitaxy (HVPE) is disclosed. We propose to use Si(210) substrates with the first buffer layer of silicon carbide (3C-SiC) and the second buffer layer of aluminum nitride (AlN). It is experimentally demonstrated for the first time that, under conditions of anisotropic deformation in the GaN/AlN/3C-SiC/Si(210) structure, a GaN epilayer exhibits growth in semi-polar directions.
引用
收藏
页码：274 / 276
页数：3
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