Microstructure and optical properties of PbSe nanocrystalline films prepared by magnetron sputtering

被引:9
|
作者
Wu, Wei [1 ]
Tang, Yongliang [2 ]
Li, Bo [1 ]
Xiang, Xia [1 ]
Liu, Chunming [1 ]
Zu, Xiaotao [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Phys, Chengdu 610054, Peoples R China
[2] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Peoples R China
关键词
PbSe nanocrystalline; Magnetron sputtering; Sputtering power; Deposition time; Photoluminescence; THIN-FILMS; BAND-GAP; OXIDE; EVOLUTION;
D O I
10.1016/j.optmat.2021.111233
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
PbSe nanocrystalline films were prepared using magnetron sputtering with different sputtering powers and deposition times. The obtained samples were characterized by X-ray diffractometry (XRD), field-emission scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), confocal Raman spectroscopy, UV-Vis-NIR spectroscopy, and spectrofluorophotometry. The XRD and XPS results show that the crystallization quality improves and the Pb/Se atomic ratio tends toward 1:1 with increasing sputtering power and deposition time. The morphology of PbSe particles varies from nearspherical to rod-like or cotton-like and then to triangular with increasing deposition time, consistent with the changed main growth orientation. The optical band gap of PbSe films decreases with increasing film thickness and grain size. A visible photoluminescence peak is observed at 655 nm, and its intensity strongly depends on the crystallization quality and morphology of PbSe particles, which is well consistent with the XRD and SEM results. Therefore, PbSe films with good luminescence performance can be obtained by adjusting sputtering power and deposition time.
引用
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页数:13
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