Vertically aligned ZnO nanowire arrays on GaN and SiC substrates

Growth of vertically aligned ZnO nanowire arrays has been extensively studied on a variety of important semiconductor substrates, such as SiC and GaN. Systematic experiments were carried out to investigate the effect of growth parameters to the quality of the nanowires. In addition, the growth of nanowalls connecting individual aligned nanowires was studied and a growth mechanism was proposed. These conductive and interconnected nanowalls are indispensable for nanodevices to be fabricated on nonconductive substrates for serving as a common electrode. Finally, these nanowire arrays have been integrated as ultra violet detectors, which show good optical performance. (C) 2008 Elsevier B.V. All rights reserved.