Patterned Growth of Vertically Aligned ZnO Nanowire Arrays on Inorganic Substrates at Low Temperature without Catalyst

被引:250
|
作者
Xu, Sheng [1 ]
Wei, Yaguang [1 ]
Kirkham, Melanie [1 ]
Liu, Jin [1 ]
Mai, Wenjie [1 ]
Davidovic, Dragomir
Snyder, Robert L. [1 ,2 ]
Wang, Zhong Lin [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
关键词
D O I
10.1021/ja806952j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report an approach for growing aligned ZnO nanowire arrays with a high degree control over size, orientation, dimensionality, uniformity, and possibly shape. Our method combines e-beam lithography and a low temperature hydrothermal method to achieve patterned and aligned growth of ZnO NWs at <100 degrees C on general inorganic substrates, such as Si and GaN, without using catalyst. This approach opens up the possibility of applying ZnO nanowires as sensor arrays, piezoelectric antenna arrays, two-dimensional photonic crystals, IC interconnects, and nanogenerators.
引用
收藏
页码:14958 / +
页数:3
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