共 50 条
- [41] On the impact of microstructure on luminescence of InGaN/GaN multi quantum wells grown by molecular beam epitaxy PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 176 (01): : 291 - 295
- [42] GaN based LEDs grown by molecular beam epitaxy LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS II, 1998, 3279 : 28 - 35
- [43] Surface morphology of GaN grown by molecular beam epitaxy MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 56 - 58
- [45] Indirect excitation of Eu3+ in GaN codoped with Mg and Eu 6TH INTERNATIONAL CONFERENCE ON OPTICAL, OPTOELECTRONIC AND PHOTONIC MATERIALS AND APPLICATIONS (ICOOPMA) 2014, 2015, 619
- [46] Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (02): : 499 - 506
- [47] Photoluminescence of GaN grown by molecular beam epitaxy on freestanding GaN template MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS, 2002, 722 : 27 - 32
- [49] Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy Journal of Electronic Materials, 2003, 32 : 346 - 349