共 50 条
- [22] P-type Mg-doped GaN grown by molecular beam epitaxy using ammonia as the nitrogen source GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 : 169 - 173
- [27] Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si(111) MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1998, 3 (19): : art. no. - 19
- [28] Effect of a metal buffer layer on GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia Pan Tao Ti Hsueh Pao, 2008, 10 (1998-2002):
- [30] Raman scattering and photoluminescence of Mg doped GaN films grown by molecular beam epitaxy GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 219 - 224