Temperature Dependent Current-Voltage and Capacitance-Voltage Characteristics of an Au/n-Type Si Schottky Barrier Diode Modified Using a PEDOT:PSS Interlayer

The temperature dependence of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of an Au/n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height (Phi(B)), ideality factor (n), saturation current (I-o), doping concentration (N-D), and series resistance (R-s), were obtained as a function of temperature. The Richardson constant (A**) obtained from the In(I-o/T-2) versus 1000/T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height ((Phi) over bar (bo)) and standard deviation (sigma(0)) calculated using the apparent Schottky barrier height (Phi(ap)) versus 1/2kT plot were 1.26 eV and 0.15 eV, respectively. From a fit of the modified Richardson plot of In(I-0/T-2) - (q sigma)(2)/2(kT)(2) versus 1000/T, the A** was extracted as 134 A/cm(2)K(2), which was close to the theoretical value of the n-Si. The interface state densities obtained from the Au/PEDOT:PSS/n-Si SBD decreased with increasing temperature. Furthermore, the conduction mechanism dominating the reverse-bias leakage current in Au/PEDOT:PSS/n-Si SBD was described and discussed.