Dependence of electrostatic potential distribution of Al2O3/Ge structure on Al2O3 thickness

被引：15

作者：

Wang, Xiaolei ^{[1
]}

Xiang, Jinjuan ^{[1
]}

Wang, Wenwu ^{[1
]}

Zhao, Chao ^{[1
]}

Zhang, Jing ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] North China Univ Technol, Microelect Dept, Beijing 100041, Peoples R China

来源：

SURFACE SCIENCE | 2016年 / 651卷

基金：

中国国家自然科学基金;

关键词：

Band alignment; Electrostatic potential distribution; X-ray photoelectron spectroscopy; Germanium; High-k dielectric; Charge neutrality level; HIGH-K DIELECTRICS; GATE STACK; ELECTRICAL-PROPERTIES; PASSIVATION; OXIDATION; LAYER;

D O I：

10.1016/j.susc.2016.04.001

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrostatic potential distribution of Al2O3/Ge structure is investigated vs. Al2O3 thickness by X-ray photoelectron spectroscopy (XPS). The electrostatic potential distribution is found to be Al2O3 thickness dependent. This interesting phenomenon is attributed to the appearance of gap states on Al2O3 surface (GS(Al2O3)) and its higher charge neutrality level (CNL) compared with the CNL of gap states at Al2O3/Ge interface (GS(Al2O3)/Ge), leading to electron transfer from GS(Al2O3) to GS(Al2O3/Ge). In the case of thicker Al2O3, fewer electrons transfer from GS(Al2O3) to GS(Al2O3)/Ger resulting in a larger potential drop across Al2O3 and XPS results. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：94 / 99

页数：6

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