Doping and Illumination Dependence of 1/f Noise in Pentacene Thin-Film Transistors

被引：10

作者：

Jia, Zhang ^{[1
]}

Meric, Inanc ^{[1
]}

Shepard, Kenneth L. ^{[1
]}

Kymissis, Ioannis ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

基金：

美国国家科学基金会;

关键词：

Charge carrier mobility; field-effect transistors (FETs); organic compounds; thin-film transistors; MOS;

D O I：

10.1109/LED.2010.2052779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We characterize the influence of interfacial trap sites on carrier scattering and subsequent contribution to channel noise by taking 1/f noise measurements on pentacene organic field-effect transistors (OFETs). The noise dependence on drain current from OFETs with UV-ozone treated parylene gate dielectric before the deposition of the semiconductor is compared to that of otherwise identical OFETs with no air exposure during fabrication. Our studies indicate a different noise characteristic in the two samples, which is further confirmed by increasing the carrier density under illumination and comparing the noise spectrum for photogenerated charges with gate-field-induced carriers.

引用

页码：1050 / 1052

页数：3

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