H-Plane Cross-Polarization Reduction of a Rectangular Patch Antenna Using SISL Technology

被引:9
|
作者
Moro, Eric Newton [1 ]
Ma, Kaixue [1 ]
Luo, Yu [1 ]
Yan, Ningning [1 ]
Tang, Bin [1 ]
机构
[1] Tianjin Univ, Sch Microelect, Tianjin 300072, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
Substrates; Antennas; Gain; Patch antennas; Antenna measurements; Electric fields; Bandwidth; 5G; cross polarization; orthogonal fields; rectangular patch antenna; substrate integrated suspended line (SISL); MICROSTRIP ANTENNA; ENHANCED-GAIN; BANDWIDTH;
D O I
10.1109/LAWP.2021.3089737
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter proposes a simple rectangular patch antenna with reduced H-plane cross polarization using substrate integrated suspended line (SISL) technology. Compared with the conventional patch antenna, the embedded air cavities in the multilayer SISL provide a lower loss characteristic and higher gain. However, the SISL patch antenna is prone to high H-plane cross polarization. The nonradiating edges of the traditional patch are extended to the electric walls of the SISL to reduce the orthogonal E-fields of the nonradiating edge, which suppresses the H-plane cross polarization without affecting the copolarization. A slot is introduced to provide frequency tuning capabilities. The simulation and measurement results are well agreed. Measured results show a gain of about 9.85 dBi, and the H-plane cross polarization is less than -20.8 dB.
引用
收藏
页码:1532 / 1536
页数:5
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