H-Plane Cross-Polarization Reduction of a Rectangular Patch Antenna Using SISL Technology

被引：9

作者：

Moro, Eric Newton ^{[1
]}

Ma, Kaixue ^{[1
]}

Luo, Yu ^{[1
]}

Yan, Ningning ^{[1
]}

Tang, Bin ^{[1
]}

机构：

[1] Tianjin Univ, Sch Microelect, Tianjin 300072, Peoples R China

来源：

IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS | 2021年 / 20卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Substrates; Antennas; Gain; Patch antennas; Antenna measurements; Electric fields; Bandwidth; 5G; cross polarization; orthogonal fields; rectangular patch antenna; substrate integrated suspended line (SISL); MICROSTRIP ANTENNA; ENHANCED-GAIN; BANDWIDTH;

D O I：

10.1109/LAWP.2021.3089737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter proposes a simple rectangular patch antenna with reduced H-plane cross polarization using substrate integrated suspended line (SISL) technology. Compared with the conventional patch antenna, the embedded air cavities in the multilayer SISL provide a lower loss characteristic and higher gain. However, the SISL patch antenna is prone to high H-plane cross polarization. The nonradiating edges of the traditional patch are extended to the electric walls of the SISL to reduce the orthogonal E-fields of the nonradiating edge, which suppresses the H-plane cross polarization without affecting the copolarization. A slot is introduced to provide frequency tuning capabilities. The simulation and measurement results are well agreed. Measured results show a gain of about 9.85 dBi, and the H-plane cross polarization is less than -20.8 dB.

引用

页码：1532 / 1536

页数：5

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