Preparation of Cu(In1-xGax)Se2 thin films by chemical spray pyrolysis

被引：0
|
作者：
Isomura, S [1 ]
Shirakata, S
Kannaka, Y
Hasegawa, H
Kariya, T
机构：
[1] Ehime Univ, Fac Engn, Matsuyama, Ehime 79077, Japan
[2] Sumitomo Elect Syst Co Ltd, Tokyo 112, Japan
[3] Kochi Univ, Fac Sci, Kochi 780, Japan
来源：
TERNARY AND MULTINARY COMPOUNDS | 1998年 / 152卷
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Polycrystalline films of semiconducting Cu(In1-xGax)Se-2 quaternary alloy, one of the promising materials for photovoltaic applications, have been prepared by means of chemical spray pyrolysis. Single phase Cu(In1-xGax)Se-2 films with chalcopyrite structure have been successfully grown on glass substrate at both 360 degrees and 400 degrees C. The films have been characterized by X-ray diffraction, optical absorption, photoacoustic spectroscopy and Raman measurements in terms of alloy composition.
引用
收藏
页码：301 / 304
页数：4
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