Process variants for Cu(In1-xGax)Se2 deposition investigated by in situ spectroscopic light scattering

被引：0

作者：

Sakurai, K ^{[1
]}

Scheer, R ^{[1
]}

Kaufmann, CA ^{[1
]}

Yamada, A ^{[1
]}

Fons, P ^{[1
]}

Kimura, Y ^{[1
]}

Baba, T ^{[1
]}

Matsubara, K ^{[1
]}

Nakanishi, H ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] AIST, Energy Elect RI, Tsukuba, Ibaraki 3058568, Japan

来源：

PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年

关键词：

SLS; CIGS; CuInGaSe; surface roughness; in-situ monitoring;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have applied in situ diffuse spectroscopic light scattering (SLS) to the three-stage deposition process of polycrystalline Cu(In1-xGax)Se-2 (CIGSe) thin films. The process has been studied by systematic variation of the major process parameters of CIGSe, such as (1) substrate temperature and (2) Ga concentration. SLS signals in the wavelength range of 400 similar to 800 nm has been used in order to derive the development of surface toughness dorm-growth. SLS was found to be more sensitive to near-surface compositions than the conventional temperature monitoring techniques. Emergence of a Cu-rich phase at the surface before the stoichiometry point was observed by SLS. Optimum conditions for smoother CIGSc surfaces has been proposed for each process parameter.

引用

页码：384 / 387

页数：4

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