InGaAs/GaAs vertical-cavity surface emitting laser on GaAs (311)B substrate using carbon auto-doping

被引：12
|
作者：
Mizutani, A [1 ]
Hatori, N [1 ]
Nishiyama, N [1 ]
Koyama, F [1 ]
Iga, K [1 ]
机构：
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 268503, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期
关键词：
VCSEL; GaAs (311)B substrate; polarization control; MOCVD; carbon doping; p-DBR; AlAs;
D O I：
10.1143/JJAP.37.1408
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have realized a low threshold InGaAs/GaAs vertical-cavity surface emitting laser (VCSEL) grown on GaAs (311)B substrates by metalorganic chemical-vapor deposition. The lasers exhibited a threshold current of 16mA and a threshold current density of 810 A/cm(2) for a 50 mu m phi circular active area device. We obtained low electric resistance of p-type DBRs on GaAs (311)B by using AlAs carbon auto-doping with a hole concentration of 2 x 10(19) cm(-3). We also demonstrated a stable polarization operation of (311)B grown VCSELs.
引用
收藏
页码：1408 / 1412
页数：5
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