VERTICAL-CAVITY SURFACE-EMITTING INGAAS GAAS-LASERS WITH PLANAR LATERAL DEFINITION

被引：59
|
作者：
ORENSTEIN, M
VONLEHMEN, AC
CHANGHASNAIN, C
STOFFEL, NG
HARBISON, JP
FLOREZ, LT
CLAUSEN, E
JEWELL, JE
机构：
[1] Bellcore, Red Bank, NJ 07701
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 24期
关键词：
D O I：
10.1063/1.102923
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A planarity preserving method for the definition of vertical-cavity surface-emitting lasers (VC-SEL) is described. A strained-layer InGaAs quantum well VC-SEL structure was grown and lasers were laterally defined using a tailored deep proton implantation process. In these lasers we obtained low threshold current densities of 1000 A/cm2 and efficient cw operation. This method facilitates large-scale integration of VC-SEL devices.
引用
收藏
页码：2384 / 2386
页数：3
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