Formation of device isolation in GaAs with polyenergetic ion implantation

被引：15

作者：

Komarov, FF ^{[1
]}

Kamyshan, AS ^{[1
]}

Mironov, AM ^{[1
]}

Lagutin, AE ^{[1
]}

Martynov, IS ^{[1
]}

机构：

[1] Belarusian State Univ, Inst Appl Phys Problems, Minsk, BELARUS

来源：

VACUUM | 2001年 / 63卷 / 04期

关键词：

interdevice isolation; GaAs; epitaxial layer; polyenergetic ion implantation;

D O I：

10.1016/S0042-207X(01)00242-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method of the formation of device isolation in III-V semiconductors is considered. The method is based on the creation of a uniform concentration of radiation defects by polyenergetic ion implantation. A numerical model as well as a computer program have been developed which enabled us to find optimal energy and dose sets for polyenergetic ion implantation, necessary to form high-quality insulating layers. Experiments on the formation of isolation in GaAs have been carried out. The electric properties and the thermal stability of the implanted regions have been investigated. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：577 / 579

页数：3

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