Investigation of microstructure modification of C-doped a-SiO2/Si after Pb-ion irradiation

被引：1

作者：

Liu ChunBao ^{[1
,2
]}

Wei KongFang ^{[2
]}

Yao CunFeng ^{[2
]}

Wang ZhiGuang ^{[2
]}

Jin YunFan ^{[2
]}

Toulemonde, M. ^{[3
]}

机构：

[1] Heze Univ, Dept Phys, Heze 274015, Peoples R China

[2] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

[3] Ctr Interdisciplinary Res Heavy Ions, F-14070 Caen, France

来源：

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2012年 / 55卷 / 02期

基金：

中国国家自然科学基金;

关键词：

swift heavy ion irradiation; C-doped SiO2; Transmission Electron Microscopy (TEM); OPTICAL-PROPERTIES; SIO2; PHOTOLUMINESCENCE; LUMINESCENCE;

D O I：

10.1007/s11433-011-4599-z

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thermally grown amorphous SiO2 (a-SiO2) films were implanted at room temperature (RT) with 100 keV C-ions to 5.0x10(17) ions/cm(2). These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x10(12) and 5.0x10(12) ions/cm(2). Then the samples were investigated using Transmission Electron Microscopy (TEM) at RT. Significant microstructure modifications were observed in C-doped a-SiO2/Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0x10(12) Pb/cm(2) irradiated and C-doped sample. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0x10(12) Pb/cm(2). Possible modification processes of C-doped a-SiO2 under swift heavy ion irradiations are briefly discussed.

引用

页码：242 / 246

页数：5

共 24 条

[1] Investigation of microstructure modification of C-doped a-SiO2/Si after Pb-ion irradiation
ChunBao Liu
KongFang Wei
CunFeng Yao
ZhiGuang Wang
YunFan Jin
M. Toulemonde
Science China Physics, Mechanics and Astronomy, 2012, 55 : 242 - 246
[2] Investigation of microstructure modification of C-doped a-SiO2/Si after Pb-ion irradiation
TOULEMONDE M
Science China(Physics,Mechanics & Astronomy), 2012, Mechanics & Astronomy)2012 (02) : 242 - 246
[3] Modification of C-doped a-SiO2 after Swift Heavy-Ion Irradiation
Wang, Zhi-Guang
Liu, Cun-Bao
Zang, Hang
Wei, Kong-Fang
Yao, Cun-Feng
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (06) : 2705 - 2707
[4] Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation
Liu Chun-Bao
Wang Zhi-Guang
Zang Hang
Wei Kong-Fang
Yao Cun-Feng
Sheng Yan-Bin
Ma Yi-Zhun
Benyagoub, A.
Toulemonde, M.
Jin Yun-Fan
CHINESE PHYSICS C, 2008, 32 : 251 - 254
[5] Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations
刘纯宝
王志光
中国物理C, 2011, 35 (09) : 885 - 889
[6] Raman scattering investigation of C-doped a-SiO2 after high energy heavy ion irradiations
Liu Chun-Bao
Wang Zhi-Guang
CHINESE PHYSICS C, 2011, 35 (09) : 885 - 889
[7] FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation
Zhao, ZM
Wang, ZG
Benyagoub, A
Toulemonde, M
Levesque, F
Song, Y
Jin, YF
Sun, YM
HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION, 2005, 29 (08): : 824 - 829
[8] Atomistic modelling of the interface of Si nanocrystal structures in a-SiO2 before and after ion irradiation
Flyura, Djurabekova
Marie, Backman
Kai, Nordlund
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (12-13): : 2683 - 2686
[9] Structural modification of C-doped SiO2 induced by swift heavy ion irradiations
Wang, Z. G.
Zhao, Z. M.
Benyagoub, A.
Toulemonde, M.
Levesque, F.
Song, Y.
Jin, Y. F.
Sun, Y. M.
Liu, C. B.
Zang, H.
Wei, K. F.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 256 (01): : 288 - 292
[10] Swift heavy ion irradiation induced luminescence from C-doped SiO2 films
Wang, ZG
Jin, YF
Xie, EQ
Zhu, ZY
Hou, MD
Chen, XX
Sun, YM
Zhang, QX
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 193 : 685 - 689

← 1 2 3 →