Investigation of microstructure modification of C-doped a-SiO2/Si after Pb-ion irradiation

被引：1
|
作者：
Liu ChunBao [1 ,2 ]
Wei KongFang [2 ]
Yao CunFeng [2 ]
Wang ZhiGuang [2 ]
Jin YunFan [2 ]
Toulemonde, M. [3 ]
机构：
[1] Heze Univ, Dept Phys, Heze 274015, Peoples R China
[2] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
[3] Ctr Interdisciplinary Res Heavy Ions, F-14070 Caen, France
来源：
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2012年 / 55卷 / 02期
基金：
中国国家自然科学基金;
关键词：
swift heavy ion irradiation; C-doped SiO2; Transmission Electron Microscopy (TEM); OPTICAL-PROPERTIES; SIO2; PHOTOLUMINESCENCE; LUMINESCENCE;
D O I：
10.1007/s11433-011-4599-z
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Thermally grown amorphous SiO2 (a-SiO2) films were implanted at room temperature (RT) with 100 keV C-ions to 5.0x10(17) ions/cm(2). These samples were irradiated at RT with 853 MeV Pb-ions to 1.0x10(12) and 5.0x10(12) ions/cm(2). Then the samples were investigated using Transmission Electron Microscopy (TEM) at RT. Significant microstructure modifications were observed in C-doped a-SiO2/Si samples after high energy Pb-ion irradiations, and the formation of new structures depended strongly on the Pb-ion irradiation fluences. For example, tracks in high density were observed in a 1.0x10(12) Pb/cm(2) irradiated and C-doped sample. Additionally, the length of tracks grows, and a large number of 8H-SiC nanocrystals can be seen in the film when irradiation fluence is increased to 5.0x10(12) Pb/cm(2). Possible modification processes of C-doped a-SiO2 under swift heavy ion irradiations are briefly discussed.
引用
收藏
页码：242 / 246
页数：5
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