Structural modification of C-doped SiO2 induced by swift heavy ion irradiations

被引：4

作者：

Wang, Z. G. ^{[1
]}

Zhao, Z. M.

Benyagoub, A.

Toulemonde, M.

Levesque, F.

Song, Y.

Jin, Y. F.

Sun, Y. M.

Liu, C. B.

Zang, H.

Wei, K. F.

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

[3] CIRIL, F-14070 Caen 05, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 256卷 / 01期

基金：

中国国家自然科学基金;

关键词：

swift heavy ion irradiations; C-doped SiO2; structural modification; FTIR and Raman spectroscopes;

D O I：

10.1016/j.nimb.2006.12.071

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 x 10(16) to 8.6 x 10(17)C ions/cm(2), then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 x 10(11) to 3.8 x 10(12) ions/cm(2), respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C=C(O), C C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：288 / 292

页数：5

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