Domain Wall Motion Across Various Grain Boundaries in Ferroelectric Thin Films

被引：41

作者：

Marincel, Daniel M. ^{[1
,2
]}

Zhang, Huairuo ^{[3
]}

Jesse, Stephen ^{[4
]}

Belianinov, Alex ^{[4
]}

Okatan, Mahmut B. ^{[4
]}

Kalinin, Sergei V. ^{[4
]}

Rainforth, W. Mark ^{[3
]}

Reaney, Ian M. ^{[3
]}

Randall, Clive A. ^{[1
,2
]}

Trolier-McKinstry, Susan ^{[1
,2
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[3] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England

[4] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2015年 / 98卷 / 06期

基金：

英国工程与自然科学研究理事会; 美国国家科学基金会;

关键词：

BARIUM-TITANATE; ORIENTATION DEPENDENCE; ELECTRICAL-PROPERTIES; CRYSTAL ORIENTATION; SINGLE-CRYSTALS; X-RAY; BEHAVIOR; ENERGY; SIZE; TRANSFORMATION;

D O I：

10.1111/jace.13535

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Domain wall movement at and near engineered 10 degrees, 15 degrees, and 24 degrees tilt and 10 degrees and 30 degrees twist grain boundaries was measured by band excitation piezoresponse force microscopy for Pb(Zr,Ti)O-3 films with Zr/Ti ratio of 45/55 and 52/48. A minimum in nonlinear response was observed at the grain boundary for the highest angle twist and tilt grain boundaries, while a maximum in nonlinear response was observed at the 10 degrees tilt grain boundaries. The observed nonlinear response was correlated with the domain configurations imaged in cross section by transmission electron microscopy.

引用

页码：1848 / 1857

页数：10

共 50 条

[41] The Domain Structure of Thin Ferroelectric Films
Sokolov, A. A.
Ivanov, S. D.
[J]. OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2022, 58 (02) : 154 - 159
[42] Ultrafast Imaging of Carrier Transport across Grain Boundaries in Hybrid Perovskite Thin Films
Snaider, Jordan M.
Guo, Zhi
Wang, Ti
Yang, Mengjin
Yuan, Long
Zhu, Kai
Huang, Libai
[J]. ACS ENERGY LETTERS, 2018, 3 (06): : 1402 - +
[43] Effects of grain size and disorder on domain wall propagation in CoFeB thin films
Voto, Michele
Lopez-Diaz, Luis
Torres, Luis
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (18)
[44] Reversal of current-induced domain wall motion in TbFeCo ferrimagnetic thin films across the magnetization compensation point
Ishibashi, Mio
Yakushiji, Kay
Kawaguchi, Masashi
Tsukamoto, Arata
Nakatsuji, Satoru
Hayashi, Masamitsu
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (01)
[45] Effect of finite domain-wall width on the domain structures of epitaxial ferroelectric and ferroelastic thin films
Emelyanov, AY
Pertsev, NA
Salje, EKH
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) : 1355 - 1366
[46] Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films
Kim, D. J.
Connell, J. G.
Seo, S. S. A.
Gruverman, A.
[J]. NANOTECHNOLOGY, 2016, 27 (15)
[47] Soft modes of collective domain-wall vibrations in epitaxial ferroelectric thin films
Pertsev, NA
Emelyanov, AY
[J]. PHYSICAL REVIEW B, 2002, 65 (17): : 1 - 5
[48] Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films
McGilly, Leo J.
Sandu, Cosmin S.
Feigl, Ludwig
Damjanovic, Dragan
Setter, Nava
[J]. ADVANCED FUNCTIONAL MATERIALS, 2017, 27 (15)
[49] NATURE OF DOMAIN-WALL MOTION COERCIVE FORCE IN THIN-FILMS
POGOSYAN, YM
CHELABYAN, MA
[J]. FIZIKA METALLOV I METALLOVEDENIE, 1980, 49 (01): : 85 - 90
[50] The Technique to Characterize Irreversible Domain Motion in Ferroelectric Thin Films in a Large Time Scale
Jiang, A. Q.
[J]. ANALYTICAL TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND PROCESS CHARACTERIZATION 6 (ALTECH 2009), 2009, 25 (03): : 283 - 290

← 1 2 3 4 5 →