Scaling of low-frequency noise in resistive FET mixers

被引：0
|
作者：
Margraf, M [1 ]
Boeck, G [1 ]
机构：
[1] Tech Univ Berlin, Berlin, Germany
来源：
PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-frequency noise in resistive FET mixers is investigated. The origin and the mechanism of creation are described using simplified equivalent circuits. Measurements on a single-ended mixer, as well as idealized simulations and formulas show the influence of LO frequency and gate width. The results confirm the existence of two noise sources: FET channel and intrinsic gate load resistance, as was proposed in [3], [4]. Furthermore, they prove that low-frequency noise increases rapidely with increasing LO frequency (+40dB/decade). The dependence on FET gate width is about +30dB/decade for the channel noise and about +10dB/decade for the noise of gate resistors.
引用
下载
收藏
页码：873 / 876
页数：4
相关论文
共 50 条
  • [1] Analysis and modeling of low-frequency noise in resistive FET mixers
    Margraf, M
    Boeck, G
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (07) : 1709 - 1718
  • [2] Low frequency noise cancellation in resistive FET mixers
    Margraf, M
    von der Mark, S
    Boeck, G
    NOISE IN DEVICES AND CIRCUITS II, 2004, 5470 : 349 - 357
  • [3] Analytical analysis of noise figures in FET resistive mixers
    Ko, W
    Kwon, Y
    ELECTRONICS LETTERS, 1999, 35 (14) : 1169 - 1170
  • [4] Resistive FET mixers
    Yhland, Klas
    Doktorsavhandlingar vid Chalmers Tekniska Hogskola, 1999, (1562): : 1 - 40
  • [5] LOW NOISE FET INPUT AMPLIFIER FOR LOW-FREQUENCY APPLICATIONS
    EVANGELISTI, F
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (02): : 338 - +
  • [6] Resistive Graphene FET Subharmonic Mixers: Noise and Linearity Assessment
    Andersson, Michael A.
    Habibpour, Omid
    Vukusic, Josip
    Stake, Jan
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (12) : 4035 - 4042
  • [7] On the scaling limits of low-frequency noise in SiGeHBTs
    Johansen, JA
    Jin, ZR
    Cressler, JD
    Cui, Y
    Niu, GF
    Liang, QQ
    Rieh, JS
    Freeman, G
    Ahlgren, D
    Joseph, A
    SOLID-STATE ELECTRONICS, 2004, 48 (10-11) : 1897 - 1900
  • [8] Low-Frequency Noise in Si NW FET for Electrical Biosensing
    Kutovyi, Y.
    Zadorozhnyi, I.
    Hlukhova, H.
    Petrychuk, M.
    Vitusevich, S.
    2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2017,
  • [9] Low-frequency Noise Characterization of Graphene FET THz Detectors
    Yang, Xinxin
    Vorobiev, Andrei
    Jeppson, Kjell
    Stake, Jan
    Banszerus, Luca
    Stampfer, Christoph
    Otto, Martin
    Neumaier, Daniel
    2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2018,
  • [10] Impact of geometrical scaling on low-frequency noise in SiGeHBTs
    Jin, ZR
    Cressler, JD
    Niu, GF
    Joseph, AJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) : 676 - 682
12345