Scaling of low-frequency noise in resistive FET mixers

被引：0

作者：

Margraf, M ^{[1
]}

Boeck, G ^{[1
]}

机构：

[1] Tech Univ Berlin, Berlin, Germany

来源：

PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-frequency noise in resistive FET mixers is investigated. The origin and the mechanism of creation are described using simplified equivalent circuits. Measurements on a single-ended mixer, as well as idealized simulations and formulas show the influence of LO frequency and gate width. The results confirm the existence of two noise sources: FET channel and intrinsic gate load resistance, as was proposed in [3], [4]. Furthermore, they prove that low-frequency noise increases rapidely with increasing LO frequency (+40dB/decade). The dependence on FET gate width is about +30dB/decade for the channel noise and about +10dB/decade for the noise of gate resistors.

引用

页码：873 / 876

页数：4

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