Low-Frequency Noise in Si NW FET for Electrical Biosensing

被引:0
|
作者
Kutovyi, Y. [1 ]
Zadorozhnyi, I. [1 ]
Hlukhova, H. [1 ]
Petrychuk, M. [2 ]
Vitusevich, S. [1 ]
机构
[1] Forschungszentrum Julich, Peter Grunberg Inst PGI 8, Julich, Germany
[2] Taras Shevchenko Natl Univ Kyiv, Fac Radiophys Elect & Comp Syst, Kiev, Ukraine
关键词
Silicon nanowire; field-effect transistor; liquid gate; noise spectroscopy; Hooge parameter; cardiac troponin I; CARDIAC TROPONIN-I; NANOWIRE; DNA; SENSORS;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We applied the noise spectroscopy technique as a powerful tool for the investigation of nano-sized bio-objects. The electrical and noise properties of the fabricated liquid-gated Si nanowire field-effect transistors as well as the influence of biomolecule attachment events on the nanowire structure were studied. We revealed that the dimensionless Hooge parameter can be used as a figure of merit for the detection of biological objects in particular cardiac troponin I (cTnI).
引用
收藏
页数:4
相关论文
共 50 条
  • [1] Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties
    Gasparyan, F.
    Khondkaryan, H.
    Arakelyan, A.
    Zadorozhnyi, I.
    Pud, S.
    Vitusevich, S.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (06)
  • [2] Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties
    Vitusevich, S. (s.vitusevich@fz-juelich.de), 1600, American Institute of Physics Inc. (120):
  • [3] LOW NOISE FET INPUT AMPLIFIER FOR LOW-FREQUENCY APPLICATIONS
    EVANGELISTI, F
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (02): : 338 - +
  • [4] Scaling of low-frequency noise in resistive FET mixers
    Margraf, M
    Boeck, G
    PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II, 2003, : 873 - 876
  • [5] Analysis and modeling of low-frequency noise in resistive FET mixers
    Margraf, M
    Boeck, G
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (07) : 1709 - 1718
  • [6] Low-frequency Noise Characterization of Graphene FET THz Detectors
    Yang, Xinxin
    Vorobiev, Andrei
    Jeppson, Kjell
    Stake, Jan
    Banszerus, Luca
    Stampfer, Christoph
    Otto, Martin
    Neumaier, Daniel
    2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2018,
  • [7] Low-frequency noise in porous Si LED
    Szentpáli, B
    Gottwald, P
    Mohácsy, T
    Molnár, K
    Bársony, I
    NOISE IN DEVICES AND CIRCUITS, 2003, 5113 : 398 - 405
  • [8] PHENOMENOLOGICAL APPROACH TO LOW-FREQUENCY ELECTRICAL NOISE
    TEITLER, S
    OSBORNE, MFM
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) : 3274 - &
  • [9] On the Low-Frequency Noise Characterization of Z2-FET Devices
    Marquez, Carlos
    Navarro, Carlos
    Navarro, Santiago
    Padilla, Jose L.
    Donetti, Luca
    Sampedro, Carlos
    Galy, Philippe
    Kim, Yong-Tae
    Gamiz, Francisco
    IEEE ACCESS, 2019, 7 : 42551 - 42556
  • [10] Low-Frequency Noise Reduction in Si Nanowire MOSFETs
    Ohmori, K.
    Feng, W.
    Hettiarachchi, R.
    Lee, Y.
    Sato, S.
    Kakushima, K.
    Sato, M.
    Fukuda, K.
    Niwa, M.
    Yamabe, K.
    Shiraishi, K.
    Iwai, H.
    Yamada, K.
    DIELECTRICS FOR NANOSYSTEMS 5: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING -AND-TUTORIALS IN NANOTECHNOLOGY: MORE THAN MOORE - BEYOND CMOS EMERGING MATERIALS AND DEVICES, 2012, 45 (03): : 437 - 442