In situ real-time study of chemical etching process of Si(100) using light scattering

被引：14
|
作者：
Zhao, YP
Wu, YJ
Yang, HN
Wang, GC
Lu, TM
机构：
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECT & ELECT MFG,TROY,NY 12180
[2] NATL TAIWAN OCEAN UNIV,DIV GEN EDUC,CHILUNG,TAIWAN
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 02期
关键词：
D O I：
10.1063/1.117378
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the development of an in situ real-time light scattering technique to study the wet chemical etching process of Si(100), Based on a simple scattering theory, the number of etch pits and other statistical parameters such as correlation length and interface width on a pitted surface are extracted from the scattering profile. The time evolution of the surface morphology can be interpreted by a simple rate equation. (C) 1996 American Institute of Physics.
引用
收藏
页码：221 / 223
页数：3
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