The effects of nitrogen implant into gate electrode on the characteristics of dual-gate MOSFETs with ultra-this oxide and oxynitrides

被引：2
|
作者：
Chou, AI
Lin, C
Kumar, K
Chowdhury, P
Gardner, M
Gilmer, M
Fulford, J
Lee, JC
机构：
来源：
1997 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 35TH ANNUAL | 1997年
关键词：
D O I：
10.1109/RELPHY.1997.584256
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：174 / 177
页数：4
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