Capability of photoluminescence for characterization of multi-crystalline silicon

被引：15
|
作者：
Mchedlidze, T. [1 ]
Seifert, W. [2 ]
Kittler, M. [1 ,2 ]
Blumenau, A. T. [3 ]
Birkmann, B. [3 ]
Mono, T. [3 ]
Mueller, M. [3 ]
机构：
[1] Joint Lab IHP BTU, D-03046 Cottbus, Germany
[2] IHP, D-15236 Frankfurt, Oder, Germany
[3] SCHOTT Solar Wafer GmbH, D-07743 Jena, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期
关键词：
DISLOCATION-RELATED PHOTOLUMINESCENCE; RECOMBINATION ACTIVITY; METAL IMPURITIES; EXTENDED DEFECTS; SI; WAFERS; CONTAMINATION; LUMINESCENCE;
D O I：
10.1063/1.3699275
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Application of various characterization methods for the investigation of photovoltaic materials allows fast progress in perfection of their quality. However, capabilities of the methods should be clearly understood and the methods should be applied in the correct manner to avoid false and/or unreliable interpretation of the results. We applied photoluminescence (PL) for characterization of multi-crystalline silicon (mc-Si) samples and compared the obtained results with carrier lifetime measurement data for the same samples. The analyses revealed strong influence of surface recombination and optical shadowing from grain boundaries on the interpretation of the PL results. Proper surface passivation allows application of defect-related luminescence for the characterization of mc-Si along with traditionally used band-to-band luminescence. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699275]
引用
收藏
页数：11
相关论文
共 50 条
  • [41] Advanced radiative cooler for multi-crystalline silicon solar module
    Kumar, Avinash
    Chowdhury, Amartya
    SOLAR ENERGY, 2020, 201 : 751 - 759
  • [42] Influence of porous silicon formation on the performance of multi-crystalline silicon solar cells
    M SAAD
    M NADDAF
    Bulletin of Materials Science, 2015, 38 : 783 - 789
  • [43] NanoGram stays focused on multi-crystalline silicon for PV apps
    不详
    SOLID STATE TECHNOLOGY, 2009, 52 (07) : 12 - +
  • [44] A laser texturing study on multi-crystalline silicon solar cells
    Ding, Jianming
    Zou, Shuai
    Choi, Jonghyung
    Cui, Junhu
    Yuan, Dichun
    Sun, Hua
    Wu, Chengkun
    Zhu, Jingyan
    Ye, Xiaoya
    Su, Xiaodong
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 214 (214)
  • [45] Control of grain size and -orientation in multi-crystalline silicon ingots
    Di Sabatino, Marisa
    Juel, Mari
    Arnberg, Lars
    Syvertsen, Martin
    Tranell, Gabriella
    TRANSACTIONS OF THE INDIAN INSTITUTE OF METALS, 2009, 62 (4-5): : 511 - 513
  • [46] Multi-crystalline silicon solidification under controlled forced convection
    Cablea, M.
    Zaidat, K.
    Gagnoud, A.
    Nouri, A.
    Chichignoud, G.
    Delannoy, Y.
    JOURNAL OF CRYSTAL GROWTH, 2015, 417 : 44 - 50
  • [47] Residual strain distribution in casting ingot of multi-crystalline silicon
    Fukuzawa, M.
    Kashiwagi, R.
    Yamada, M.
    Hirasawa, T.
    EMRS-C: MATERIALS DEVICES AND ECONOMICS ISSUES FOR TOMORROW'S PHOTOVOLTAICS, 2011, 3
  • [48] Analysis of surface cracks in multi-crystalline thin silicon wafers
    Saffar, S.
    Skallerud, B.
    Zhang, Z. L.
    ENGINEERING FRACTURE MECHANICS, 2014, 124 : 310 - 321
  • [49] On the electronic improvement of multi-crystalline silicon via gettering and hydrogenation
    Tan, J.
    Cuevas, A.
    Macdonald, D.
    Trupke, T.
    Bardos, R.
    Roth, K.
    PROGRESS IN PHOTOVOLTAICS, 2008, 16 (02): : 129 - 134
  • [50] Behavior of nickel silicide in multi-crystalline silicon for solar cells
    Tachibana, T.
    Sameshima, T.
    Arafune, K.
    Ohshita, Y.
    Ogura, A.
    ASIA-PACIFIC CONFERENCE ON SEMICONDUCTING SILICIDES SCIENCE AND TECHNOLOGY TOWARDS SUSTAINABLE OPTOELECTRONICS (APAC-SILICIDE 2010), 2011, 11 : 163 - 166
12345