Capability of photoluminescence for characterization of multi-crystalline silicon

被引：15

作者：

Mchedlidze, T. ^{[1
]}

Seifert, W. ^{[2
]}

Kittler, M. ^{[1
,2
]}

Blumenau, A. T. ^{[3
]}

Birkmann, B. ^{[3
]}

Mono, T. ^{[3
]}

Mueller, M. ^{[3
]}

机构：

[1] Joint Lab IHP BTU, D-03046 Cottbus, Germany

[2] IHP, D-15236 Frankfurt, Oder, Germany

[3] SCHOTT Solar Wafer GmbH, D-07743 Jena, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期

关键词：

DISLOCATION-RELATED PHOTOLUMINESCENCE; RECOMBINATION ACTIVITY; METAL IMPURITIES; EXTENDED DEFECTS; SI; WAFERS; CONTAMINATION; LUMINESCENCE;

D O I：

10.1063/1.3699275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Application of various characterization methods for the investigation of photovoltaic materials allows fast progress in perfection of their quality. However, capabilities of the methods should be clearly understood and the methods should be applied in the correct manner to avoid false and/or unreliable interpretation of the results. We applied photoluminescence (PL) for characterization of multi-crystalline silicon (mc-Si) samples and compared the obtained results with carrier lifetime measurement data for the same samples. The analyses revealed strong influence of surface recombination and optical shadowing from grain boundaries on the interpretation of the PL results. Proper surface passivation allows application of defect-related luminescence for the characterization of mc-Si along with traditionally used band-to-band luminescence. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699275]

引用

页数：11

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