Electronic and structural characterization of InN heterostructures grown on β-LiGaO2 (001) substrates

被引：9
|
作者：
Wang, Jianli [1 ]
Pu, Long [1 ]
Tang, Gang [1 ]
Zhang, Junting [1 ]
机构：
[1] China Univ Min & Technol, Dept Phys, Xuzhou 221116, Peoples R China
来源：
VACUUM | 2015年 / 119卷
关键词：
LiGaO2 (001); InN; Surface/interface; Defects; First-principles calculations; MOLECULAR-BEAM EPITAXY; 1ST-PRINCIPLES CALCULATIONS; SURFACE; LIGAO2; FILMS; ALN; CONSTANTS; HYDROGEN; CRYSTAL; GAN;
D O I：
10.1016/j.vacuum.2015.05.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural and electronic properties of a wurtzite InN (11-20) film on an orthorhombic LiGaO2 (001) substrate were systematically studied by first-principle calculations. The In adsorption atoms are more favorable than the N atoms, the N-N dimer will be formed with increasing N coverage on LiGaO2 (001) surface. The calculated surface grand potentials show the perfect O-2-termination is more stable than those defective O-2-terminated LiGaO2 (001). The InN/O-2-terminated LiGaO2 (001) interface is energetically favorable interface among the atomic arrangements of the InN (11-20)parallel to LiGaO2 (001) interfaces. The antisite defects In-N may act as a potential source for p-type behavior of InN on the O-2-terminated LiGaO2 (001) surface. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码：106 / 111
页数：6
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