Characterization of the Piezoresistive Effects of Silicon Nanowires

被引：8

作者：

Jang, Seohyeong ^{[1
]}

Sung, Jinwoo ^{[1
]}

Chang, Bobaro ^{[1
]}

Kim, Taeyup ^{[1
]}

Ko, Hyoungho ^{[2
]}

Koo, Kyo-in ^{[3
]}

Cho, Dong-il ^{[1
]}

机构：

[1] Seoul Natl Univ, ISRC, ASRI, Dept Elect & Comp Engn, Seoul 08826, South Korea

[2] Chungnam Natl Univ, Dept Elect Engn, Daejeon 34134, South Korea

[3] Univ Ulsan, Dept Biomed Engn, Ulsan 44610, South Korea

来源：

SENSORS | 2018年 / 18卷 / 10期

关键词：

silicon nanowire; piezoresistive effects; surface depletion effects; nonlinearity; GIANT PIEZORESISTANCE; SI NANOWIRES; NANOSTRUCTURES; RESONATORS;

D O I：

10.3390/s18103304

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Silicon nanowires (SiNWs) have received attention in recent years due to their anomalous piezoresistive (PZR) effects. Although the PZR effects of SiNWs have been extensively researched, they are still not fully understood. Herein, we develop a new model of the PZR effects of SiNWs to characterize the PZR effects. First, the resistance of SiNW is modeled based on the surface charge density. The characteristics of SiNW, such as surface charge and effective conducting area, can be estimated by using this resistance model. Then, PZR effects are modeled based on stress concentration and piezopinch effects. Stress concentration as a function of the physical geometry of SiNWs can amplify PZR effects by an order of magnitude. The piezopinch effects can also result in increased PZR effects that are at least two times greater than that of bulk silicon. Experimental results show that the proposed model can predict the PZR effects of SiNWs accurately.

引用

页数：9

共 50 条

[1] EVALUATION OF THE PIEZORESISTIVE EFFECT IN SINGLE CRYSTALLINE SILICON NANOWIRES
Bui, Tung Thanh
Dao, Dzung Viet
Toriyama, Toshiyuki
Sugiyama, Susumu
2009 IEEE SENSORS, VOLS 1-3, 2009, : 41 - +
[2] Design and Simulation of a Novel Biomechanic Piezoresistive Sensor With Silicon Nanowires
Messina, M.
Njuguna, James
Dariol, V.
Pace, C.
Angeletti, G.
IEEE-ASME TRANSACTIONS ON MECHATRONICS, 2013, 18 (03) : 1201 - 1210
[3] Piezoresistive effect in top-down fabricated silicon nanowires
Reck, K.
Richter, J.
Hansen, O.
Thomsen, E. V.
MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 2008, : 717 - 720
[4] Characterization of Piezoresistive Coefficients in Silicon Nanowire Transistors
Pelloux-Prayer, J.
Casse, M.
Barraud, S.
Rouviere, J. -L.
Reimbold, G.
2014 15TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2014, : 49 - 52
[5] A Review on Silicon Nanowires and their use in the Development of Nano Piezoresistive Pressure Sensors
Balavalad K.B.
Nanoscience and Nanotechnology - Asia, 2023, 13 (05):
[6] Transduction performance of piezoresistive silicon nanowires on the frequency resolution of a resonant MEMS sensor
Lehee, Guillaume
Souchon, Frederic
Riou, Jean-Christophe
Bosseboeuf, Alain
Jourdan, Guillaume
2015 IEEE SENSORS, 2015, : 642 - 645
[7] Characteristics of NEMS Piezoresistive Silicon Nanowires Pressure Sensors With various Diaphragm Layers
Lou, Liang
Zhang, Songsong
Lim, Lishiah
Park, Woo-Tae
Feng, Hanhua
Kwong, Dim-Lee
Lee, Chengkuo
EUROSENSORS XXV, 2011, 25
[8] Origin of Anomalous Piezoresistive Effects in VLS Grown Si Nanowires
Winkler, Karl
Bertagnolli, Emmerich
Lugstein, Alois
NANO LETTERS, 2015, 15 (03) : 1780 - 1785
[9] Experimental characterization of the temperature dependence of the piezoresistive coefficients of silicon
Cho, Chun H.
Jaeger, Richard C.
Suhling, Jeffrey C.
2006 PROCEEDINGS 10TH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONICS SYSTEMS, VOLS 1 AND 2, 2006, : 928 - +
[10] Optical Characterization of Luminescent Silicon Nanowires
Jung, Daeyoon
Sohn, Honglae
Kim, Yongmin
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2019, 74 (02) : 140 - 144

← 1 2 3 4 5 →