Characterization of the Piezoresistive Effects of Silicon Nanowires

被引：8

作者：

Jang, Seohyeong ^{[1
]}

Sung, Jinwoo ^{[1
]}

Chang, Bobaro ^{[1
]}

Kim, Taeyup ^{[1
]}

Ko, Hyoungho ^{[2
]}

Koo, Kyo-in ^{[3
]}

Cho, Dong-il ^{[1
]}

机构：

[1] Seoul Natl Univ, ISRC, ASRI, Dept Elect & Comp Engn, Seoul 08826, South Korea

[2] Chungnam Natl Univ, Dept Elect Engn, Daejeon 34134, South Korea

[3] Univ Ulsan, Dept Biomed Engn, Ulsan 44610, South Korea

来源：

SENSORS | 2018年 / 18卷 / 10期

关键词：

silicon nanowire; piezoresistive effects; surface depletion effects; nonlinearity; GIANT PIEZORESISTANCE; SI NANOWIRES; NANOSTRUCTURES; RESONATORS;

D O I：

10.3390/s18103304

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Silicon nanowires (SiNWs) have received attention in recent years due to their anomalous piezoresistive (PZR) effects. Although the PZR effects of SiNWs have been extensively researched, they are still not fully understood. Herein, we develop a new model of the PZR effects of SiNWs to characterize the PZR effects. First, the resistance of SiNW is modeled based on the surface charge density. The characteristics of SiNW, such as surface charge and effective conducting area, can be estimated by using this resistance model. Then, PZR effects are modeled based on stress concentration and piezopinch effects. Stress concentration as a function of the physical geometry of SiNWs can amplify PZR effects by an order of magnitude. The piezopinch effects can also result in increased PZR effects that are at least two times greater than that of bulk silicon. Experimental results show that the proposed model can predict the PZR effects of SiNWs accurately.

引用

页数：9

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