Spin-dependent trap-assisted tunneling current in ultra-thin gate dielectrics

被引:8
|
作者
Miura, Y [1 ]
Fujieda, S [1 ]
机构
[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Silicon Syst Res Labs, Tsukuba, Ibaraki 3058501, Japan
关键词
gate dielectrics; leakage current; silicon nitride; trap-assisted current; electron spin resonance; spin-dependent tunneling;
D O I
10.1143/JJAP.40.2840
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have characterized the leak-age current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 run. We examined the nature of the trap sites in terms of g-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leak-age current.
引用
收藏
页码:2840 / 2843
页数:4
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