AC quantum Hall effect in epitaxial graphene

被引：0

作者：

Luond, F. ^{[1
]}

Overney, F. ^{[1
]}

Jeanneret, B. ^{[1
]}

Mueller, A. ^{[2
]}

Kruskopf, M. ^{[2
]}

Pierz, K. ^{[2
]}

机构：

[1] Fed Inst Metrol METAS, Lindenweg 50, CH-3003 Bern, Switzerland

[2] PTB, Bundesallee 100, D-38116 Braunschweig, Germany

来源：

2016 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2016) | 2016年

关键词：

Graphene; AC quantum Hall effect; quantum Hall resistance; frequency dependence; AC coaxial bridge; RESISTANCE STANDARD;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes measurements of the AC quantum Hall resistance in epitaxial graphene performed with a newly developed digitally assisted impedance bridge. Capacitive losses cause a negative frequency dependence of the quantum Hall resistance, in contrast to the positive frequency dependence observed in GaAs devices. The magnitude of the frequency dependence varies among individual graphene samples and can be significantly larger than in GaAs devices.

引用

页数：2

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