Effects of growth variables on structural and optical properties of InGaN/GaN triangular-shaped quantum wells

被引：6

作者：

Choi, RJ

Suh, EK

Lee, HJ

Hahn, YB ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Chem Engn & Technol, Chonju 561756, South Korea

[2] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea

来源：

KOREAN JOURNAL OF CHEMICAL ENGINEERING | 2005年 / 22卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

quantum well; quantum dot; InGaN/GaN; light-emitting diode;

D O I：

10.1007/BF02701501

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (QW) structures were investigated under various conditions of growth parameters such as growth temperature, flow rate of Ga and/ or In composition, and well and barrier widths. The optical properties affected by the growth parameters were well correlated with an In band gap, which is determined by the potential depth and the In composition in the well region. The emission peak energy was almost independent of the barrier width due to the relaxation of the piezoelectric fields in the triangular-shaped QWs. Photoluminescence spectra of the InGaN/GaN multiple QW structures showed a parabolic curve centered at 2.66 eV The optical property of the triangular-shaped multiple QWs was substantially improved due to formation of quantum dot-like In composition fluctuations.

引用

页码：298 / 302

页数：5

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