Comparison of optical properties between GaN and InGaN quantum wells

被引：0
|
作者：
Riblet, P
Hirayama, H
Kinoshita, A
Hirata, A
Sugano, T
Aoyagi, Y
机构：
[1] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[2] Waseda Univ, Shinjuku Ku, Tokyo 1698555, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1999年 / 216卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-3951(199911)216:1<287::AID-PSSB287>3.0.CO;2-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the experimental determination of the photoluminescence mechanism in a set of In0.2Ga0.75N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way we show that the photoluminescence is not coming from quantum dots in the quantum well but from the quantum well itself under the influence of an internal electric field induced by strain.
引用
收藏
页码：287 / 290
页数：4
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