Thermal annealing effect on nitrogen related defects of GaInNAs semiconductors

被引：0

作者：

Kim, Kang Min ^{[1
]}

Lee, Jung-Il ^{[2
]}

Ryu, Jeong Ho ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Korea Natl Univ Transportat, Dept Mat Sci & Engn, Chungju 380702, Chungbuk, South Korea

来源：

JOURNAL OF CERAMIC PROCESSING RESEARCH | 2015年 / 16卷 / 01期

关键词：

GaInNAs; Thermal annealing; N-induced defect; MOLECULAR-BEAM EPITAXY; QUANTUM-WELLS; SPECTROSCOPY; TEMPERATURE; RESONANCE; SURFACES; BEHAVIOR; ALLOYS; GROWTH;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nitrogen related defects of GaInNAs epilayers grown by molecular beam epitaxy were investigated before and after rapid thermal annealing using X-ray photoelectron spectroscopy (XPS). XPS analysis revealed that the N-induced defect configurations are most likely attributed to the N-As spilt interstitials and (N-As-As-Ga) complex. Comparison of as-grown and annealed samples showed that the nearest N-bonding configuration of GaInNAs changes from Ga3In1N to Ga1In3N after annealing, which can lead to reduction of the local strain. Annealed sample demonstrated a reduced the defect concentration, which could be due to the transformation of nearest N-bonding configuration after annealing.

引用

页码：45 / 48

页数：4

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