Thermal annealing effect in GaInNAs thin films estimated by fluorescence X-ray absorption fine structure spectroscopy

被引：4

作者：

Uno, K

Yamada, M

Takizawa, T

Tanaka, I

机构：

[1] Wakayama Univ, Dept Syst Engn, Wakayama, Wakayama 6408510, Japan

[2] Matsushita Elect Ind Co Ltd, Takatsuki, Osaka 5691193, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 4B期

关键词：

crystal structure; X-ray absorption fine structure; molecular beam epitaxy; III-V compound semiconductor; GaInNAs; thermal annealing;

D O I：

10.1143/JJAP.43.1944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The radiative efficiency of dilute nitride GaInNAs alloys is improved by thermal annealing. However, the band gap of these alloys is found to significantly blueshift. The structural changes of these alloys occur during thermal annealing. In this study, we studied the local atomic configuration around In atoms using fluorescence X-ray absorption fine structure spectroscopy. By comparing the radial distribution functions of as-grown and annealed GaInNAs thin films, it was found that the number of In atoms surrounding N atoms increases after thermal annealing.

引用

页码：1944 / 1946

页数：3

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