Detailing Ionosorption over TiO2, ZrO2, and HfO2 from First Principles

被引:20
|
作者
Garcia, Juan C. [1 ]
Deskins, N. Aaron [1 ]
机构
[1] Worcester Polytech Inst, Dept Chem Engn, Worcester, MA 01609 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2012年 / 116卷 / 31期
关键词
GAS SENSORS; AB-INITIO; OXYGEN VACANCIES; OXIDE; ANATASE; SURFACE; ADSORPTION; SENSITIVITY; CHEMISTRY; ZIRCONIA;
D O I
10.1021/jp3043285
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Identifying the principles of surface to adsorbate charge transfer is key to a better understanding of metal oxide materials as both catalysts and gas sensors. The mechanism responsible for gas sensing effects is not fully understood, but is associated with electron transfer to adsorbates, forming negatively charged anions, or ionosorption. Catalytic surface reactions may also involve electron transfer from the oxide to the adsorbates. Using density functional theory, we modeled the adsorption of small molecules over stoichiometric and reduced metal oxide surfaces of group IV metals and quantify the effect of electron transfer upon adsorption. Surface reduction was accomplished through creation of oxygen vacancies, which lead to unpaired electrons within the oxide lattice, and which may eventually transfer to adsorbates. We examined the TiO2 anatase (101), tetragonal HfO2 (101), and tetragonal ZrO2 (101) surfaces. We first focused on O-2 (a known electron scavenger) adsorption at surface cation sites and observed formation of anionic O-2 species, stabilizing O-2 on the surface. The ability of O-2 to scavenge electrons was found to be geometry-dependent, as electron transfer only occurred for a specific O-2 configuration, O-2 lying flat on the surface. We found a correlation between the work function of the metal oxide, and the ionic adsorption of the oxygen molecule; surfaces with smaller work function values have larger adsorption energies for O-2. The ionic character of a surface, as measured by vacancy formation energy, also correlates well with the O-2 adsorption energy. Thus, if the work function or vacancy formation energy of a metal oxide surface is known, it may be possible to predict when electron transfer occurs and to what degree during adsorption. By examining several other adsorbates (such as H2O or CO), we found that charge transfer only occurs during the adsorption process of an adsorbate more electronegative than the surface, in agreement with previous work (Deskins et al. J. Phys, Chem. C 2010, 114, 5891-5897). Our results therefore do show that electron transfer does not occur with all adsorbates (i.e., those molecules with low electronegativity), but any studies involving these metal oxides should take into account the possibility of ionosorption due to unpaired electrons resulting from surface reduction (defects) to correctly describe the surface chemistry involving many typical compounds.
引用
收藏
页码:16573 / 16581
页数:9
相关论文
共 50 条
  • [11] Frequency dependence of the dielectric constants and of the reflectivity for HfO2 and ZrO2 from first-principles calculations
    Silva, C. C.
    Leite Alves, H. W.
    Scolfaro, L. M. R.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 311 - +
  • [12] Electronic structure of ZrO2 and HfO2
    Perevalov, TV
    Shaposhnikov, AV
    Nasyrov, KA
    Gritsenko, DV
    Gritsenko, VA
    Tapilin, VM
    DEFECTS IN HIGH-K GATE DIELECTRIC STACKS: NANO-ELECTRONIC SEMICONDUCTOR DEVICES, 2006, 220 : 423 - +
  • [13] Thermal Expansion of HfO2 and ZrO2
    Haggerty, Ryan P.
    Sarin, Pankaj
    Apostolov, Zlatomir D.
    Driemeyer, Patrick E.
    Kriven, Waltraud M.
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2014, 97 (07) : 2213 - 2222
  • [14] ON THE DEFECT STRUCTURE OF ZRO2 AND HFO2
    KOFSTAD, P
    RUZICKA, DJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (03) : 181 - 184
  • [15] ON THE DEFECT STRUCTURE OF ZRO2 AND HFO2
    HARROP, PJ
    WANKLYN, JN
    KOFSTAD, P
    RUZICKA, DJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (12) : 1285 - 1286
  • [16] THE CRYSTAL STRUCTURE OF ZRO2 AND HFO2
    ADAM, J
    ROGERS, MD
    ACTA CRYSTALLOGRAPHICA, 1959, 12 (11): : 951 - 951
  • [17] Systematic Search for Stabilizing Dopants in ZrO2 and HfO2 Using First-Principles Calculations
    Harashima, Yosuke
    Koga, Hiroaki
    Ni, Zeyuan
    Yonehara, Takehiro
    Katouda, Michio
    Notake, Akira
    Matsui, Hidefumi
    Moriya, Tsuyoshi
    Si, Mrinal Kanti
    Hasunuma, Ryu
    Uedono, Akira
    Shigeta, Yasuteru
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2023, 36 (04) : 543 - 546
  • [18] Effects of Ionic Doping on the Behaviors of Oxygen Vacancies in HfO2 and ZrO2: A First Principles Study
    Zhang, Haowei
    Gao, Bin
    Yu, Shimeng
    Lai, Lin
    Zeng, Lang
    Sun, Bing
    Liu, Lifeng
    Liu, Xiaoyan
    Lu, Jing
    Han, Ruqi
    Kang, Jinfeng
    2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2009, : 155 - +
  • [19] THE ELECTRONIC-STRUCTURE AND COHESIVE ENERGY OF HFO2, ZRO2, TIO2, AND SNO2 CRYSTALS
    MEDVEDEVA, NI
    ZHUKOV, VP
    KHODOS, MY
    GUBANOV, VA
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 160 (02): : 517 - 527
  • [20] PREPARATION AND CHARACTERIZATION OF ZRO2 AND HFO2 MICROBALLOONS
    GILMAN, WS
    AMERICAN CERAMIC SOCIETY BULLETIN, 1967, 46 (06): : 593 - &