Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT

被引：9
|
作者：
Mazumdar, Kaushik [1 ]
Kala, Sanam [1 ]
Ghosal, Aniruddha [2 ]
机构：
[1] Indian Sch Mines, Indian Inst Technol, Dept Elect Engn, Dhanbad 826004, Bihar, India
[2] Univ Calcutta, Dept Radio Phys & Elect, 92 APC Rd, Kolkata 700009, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2019年 / 125卷
关键词：
Griffith's equation; Inverse piezoelectric effect; Physical degradation; Electrical degradation; Nanocrack formation; GAN;
D O I：
10.1016/j.spmi.2018.04.038
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In AlGaN/GaN HEMTs, electrical degradation occurs due to high-voltage stress operation which can be described by a critical voltage operation by which degradation starts to take place which is irreversible. Our investigation is on how electrical degradation occurs due to physical degradation in the device. In this work using Griffith's Equation and inverse piezo electric effect we have shown how physical degradation affects electrical properties of the device and we have also shown how cracks are generated in AlGaN epitaxial layer of the device. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码：120 / 124
页数：5
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