Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III-V Channel Metal-Oxide-Semiconductor Field-Effect Transistors

被引：3

作者：

Maegawa, Yosuke ^{[1
]}

Koba, Shunsuke ^{[1
]}

Tsuchiya, Hideaki ^{[1
,2
]}

Ogawa, Matsuto ^{[1
]}

机构：

[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 08期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

MOLECULAR-BEAM EPITAXY; SIMULATION; SI;

D O I：

10.1143/APEX.4.084301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of source/drain (S/D) parasitic resistance in ultrathin body (UTB) III-V channel metal-oxide-semiconductor field-effect transistor (MOSFET) was investigated based on Monte Carlo simulation. We found that heavily doped S/D improves source starvation and suppresses carrier's backscattering from drain to channel, owing to increased electron-electron scattering. As a result, the heavily doped S/D was shown to be effective to enhance the current drive and transconductance of UTB III-V channel MOSFET. In addition, we demonstrated that the heavily doped S/D has the advantage to provide unsaturated drain current characteristics. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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