Effect of Moisture on Electrical and Reliability Characteristics for Dense and Porous Low-k Dielectrics

被引：0

作者：

Cheng, Yi-Lung ^{[1
]}

Huang, Jun-Fu ^{[1
]}

Chang, Wei-Yuan ^{[2
]}

Chang, Yu-Min ^{[2
]}

Leu, Jihperng ^{[2
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Nan Tou 54561, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hshin Chu, Taiwan

来源：

GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5 | 2013年 / 53卷 / 01期

关键词：

RESISTANCE;

D O I：

10.1149/05301.0351ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effect of absorbed moisture on the electrical and reliability characteristics of the low-k dielectrics was investigated in this study. The experimental results indicate that the porous low-k dielectrics would absorb more moisture as compared to the dense low-k dielectrics. This absorbed moisture degrades the electrical and reliability performance of the low-k dielectrics. A higher temperature anneals at 400 degrees C is needed to decompose physicallyadsorbed water, which is benefit to restore reliability performance. On the other hand, the chemically-adsorbed moisture seems to be difficult to be removed by a 400 degrees C annealing, causing a degraded TDDB performance.

引用

页码：351 / 359

页数：9

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