Effect of Moisture on Electrical and Reliability Characteristics for Dense and Porous Low-k Dielectrics

被引：0
|
作者：
Cheng, Yi-Lung [1 ]
Huang, Jun-Fu [1 ]
Chang, Wei-Yuan [2 ]
Chang, Yu-Min [2 ]
Leu, Jihperng [2 ]
机构：
[1] Natl Chi Nan Univ, Dept Elect Engn, Nan Tou 54561, Taiwan
[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hshin Chu, Taiwan
来源：
GRAPHENE, GE/III-V, AND EMERGING MATERIALS FOR POST CMOS APPLICATIONS 5 | 2013年 / 53卷 / 01期
关键词：
RESISTANCE;
D O I：
10.1149/05301.0351ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The effect of absorbed moisture on the electrical and reliability characteristics of the low-k dielectrics was investigated in this study. The experimental results indicate that the porous low-k dielectrics would absorb more moisture as compared to the dense low-k dielectrics. This absorbed moisture degrades the electrical and reliability performance of the low-k dielectrics. A higher temperature anneals at 400 degrees C is needed to decompose physicallyadsorbed water, which is benefit to restore reliability performance. On the other hand, the chemically-adsorbed moisture seems to be difficult to be removed by a 400 degrees C annealing, causing a degraded TDDB performance.
引用
收藏
页码：351 / 359
页数：9
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