Amorphous silicon direct bonding (a-SDB) with improved surface roughness

被引：0

作者：

Kim, BH ^{[1
]}

Chung, TD

Lee, JW

Lee, YJ

Chun, KJ

机构：

[1] Seoul Natl Univ, ISRC, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

[3] Seoul Natl Univ, Med Res Ctr, Inst Med & Biol Engn, Seoul 110799, South Korea

[4] Inst Adv Engn, Elect Mat Lab, Micro Syst Team, Yongin 449820, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1998年 / 33卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this paper, we realize direct bonding between amorphous silicon and various silicon dioxide layers. The 1 mu m thick amorphous silicon layer deposited by LPCVD at 550 degrees C and 6000 Angstrom thermal SiO2 on silicon substrate form direct bonds. The 1600 Angstrom CVD SiO2 layer deposited by PECVD can also make direct bonding with amorphous silicon. This is an advanced silicon direct banding technology and is suitable for the design of silicon micro-machined structures.

引用

页码：S450 / S453

页数：4

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