The electronic structure of surface chains in the layered semiconductor In4Se3(100)

被引：31

作者：

Losovyj, Ya. B. ^{[3
]}

Klinke, Melanie ^{[4
]}

Cai, En ^{[4
]}

Rodriguez, Idaykis ^{[4
]}

Zhang, Jiandi ^{[4
]}

Makinistian, L. ^{[5
]}

Petukhov, A. G. ^{[5
]}

Albanesi, E. A. ^{[6
,7
]}

Galiy, P. ^{[8
]}

Fiyala, Ya. ^{[8
]}

Liu, Jing ^{[2
]}

Dowben, P. A. ^{[1
,2
]}

机构：

[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA

[3] Louisiana State Univ, Ctr Adv Microstruct & Devices, Baton Rouge, LA 70806 USA

[4] Florida Int Univ, Dept Phys, Miami, FL 33199 USA

[5] S Dakota Sch Mines, Dept Phys, Rapid City, SD 57701 USA

[6] Univ Nacl Entre Rios, Fac Ingn, RA-3101 Oro Verde, ER, Argentina

[7] Consejo Nacl Invest Cient & Tecn, INTEC, RA-3000 Santa Fe, NM, Argentina

[8] Ivan Franko Natl Univ, Dept Elect, UA-79005 Lvov, Ukraine

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2894577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ordered (100) surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium (In) chains. A band with significant dispersion in the plane of the surface is observed near the valence band maximum. The band exhibits an anisotropic dispersion with similar to 1 eV band width along the In chain direction. The dispersion of this band is largely due to the hybridization of In-s and Se-p orbitals, but the hybridization between In-s and Se-p and In-p and Se-p orbitals is also critical in establishing the band gap. (c) 2008 American Institute of Physics.

引用

页数：3

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