Studies of the structure of defects in In4Se3 crystals by small-angle neutron scattering

被引：0
|
作者：
V. M. Garamus
A. Kh. Islamov
Ya. P. Pilat
V. P. Savchin
机构：
[1] Joint Institute for Nuclear Research,
[2] I. Ya. Franko State University,undefined
来源：
Physics of the Solid State | 1998年 / 40卷
关键词：
Precipitation; Spectroscopy; Indium; State Physics; Neutron Scattering;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Small-angle neutron scattering is used to study the layered semiconductor In4Se3. It is observed that the samples contain inhomogeneities of colloidal dimensions, which are attributed to the precipitation of indium. Annealing reduces the concentration of inhomogeneities. Modeling the system using an ensemble of primary spherical inhomogeneities showed that a single cluster of a rectangular superlattice (2-2-6) contains 24 primary inhomogeneities of radius 13.5±1,5 Å and the distance between them is 70.9±1.5 Å.
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页码：223 / 225
页数：2
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