Super junction LDMOS with P-trench and stepped buried oxide layer for high performance

被引：3

作者：

Tang, Pan-pan ^{[1
]}

Wang, Ying ^{[2
]}

Cao, Fei ^{[2
]}

Yu, Cheng-hao ^{[2
]}

Bao, Meng-tian ^{[1
]}

Luo, Xin ^{[1
]}

机构：

[1] Harbin Engn Univ, Coll Informat & Commun Engn, Harbin 150001, Heilongjiang, Peoples R China

[2] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2019年 / 125卷

基金：

美国国家科学基金会;

关键词：

Breakdown voltage; LDMOS; Specific on-resistance; Silicon-on-insulator (SOI); HIGH-VOLTAGE DEVICE; ELECTRIC-FIELD; BREAKDOWN VOLTAGE; SUPERJUNCTION LDMOS; ON-RESISTANCE; POWER MOSFETS; SOI; TRANSISTORS; SIMULATION; IMPROVE;

D O I：

10.1016/j.spmi.2018.11.005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this paper, a new silicon-on-insulator superjunction lateral double-diffused MOSFET (SOI SJLDMOS) with a p-trench layer and stepped buried oxide, is investigated using 3D numerical simulation. The p-trench layer and stepped buried oxide distinguish it from a conventional SOI SJLDMOS. The etched buried oxide layer, with its stepped buried -oxide structure, which facilitates a more even electric field distribution via the electric field modulation effect, increases the breakdown-voltage (BV). Furthermore, the p-trench layer improves the doping concentration through compensation depletion, which further decreases the specific on-resistance (R-on,R-sp). The simulation indicates that the new device has a higher BV (increased by 29%) than the conventional SOI SJLDMOS. At the same time, R-on,R-sp decreases by 20% for the on-state for a given drift-region length.

引用

页码：198 / 204

页数：7

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