Photoluminescence of porous-silicon/diamondlike-carbon-film structures subjected to rapid thermal annealing

被引：5
|
作者：
Rozhin, AG [1 ]
Klyui, NI
Piryatinskii, YP
Semenovich, VA
机构：
[1] Ukrainian Natl Acad Sci, Inst Semicond Phys, Kiev, Ukraine
[2] Ukrainian Natl Acad Sci, Inst Phys, Kiev, Ukraine
来源：
TECHNICAL PHYSICS LETTERS | 1999年 / 25卷 / 04期
关键词：
D O I：
10.1134/1.1262460
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of rapid thermal annealing on the photoluminescence properties of porous-silicon/diamondlike-carbon-film structures is investigated. Redistribution of the radiation from the long-wavelength to the short-wavelength region is discovered. Models of the processes observed are presented. (C) 1999 American Institute of Physics. [S1063-7850(99)02004-2].
引用
收藏
页码：304 / 306
页数：3
相关论文
共 50 条
  • [21] The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures
    Gargallo-Caballero, R.
    Miguel-Sanchez, J.
    Guzman, A.
    Hierro, A.
    Munoz, E.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (06)
  • [22] Phase stabilization by rapid thermal annealing in amorphous hydrogenated silicon nitride film
    Singh, Sarab Preet
    Srivastava, P.
    Ghosh, S.
    Khan, Saif Ali
    Prakash, G. Vijaya
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (09)
  • [23] Scanning rapid thermal annealing process for poly silicon thin film transistor
    Kim, Tae-Kyung
    Kim, Gi-Bum
    Yoon, Yeo-Geon
    Kim, Chang-Hoon
    Lee, Byung-Il
    Joo, Seung-Ki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (10): : 5773 - 5775
  • [24] Scanning rapid thermal annealing process for poly silicon thin film transistor
    Kim, TK
    Kim, GB
    Yoon, YG
    Kim, CH
    Lee, BI
    Joo, SK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (10): : 5773 - 5775
  • [25] RAPID THERMAL ANNEALING TECHNIQUE FOR POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    YUDASAKA, I
    OHSHIMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A): : 1256 - 1260
  • [26] Rapid thermal annealing technique for polycrystalline silicon thin-film transistors
    Yudasaka, Ichio
    Ohshima, Hiroyuki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (3 A): : 1256 - 1260
  • [27] Rapid Thermal Annealing of Symmetric p-TOPCon Silicon Test Structures
    Sinha, Arpan
    Dasgupta, Sagnik
    Rohatgi, Ajeet
    Gupta, Mool C.
    2023 IEEE 50TH PHOTOVOLTAIC SPECIALISTS CONFERENCE, PVSC, 2023,
  • [28] Influence of rapid thermal annealing temperature on the photoluminescence of Tb ions embedded in silicon nitride films
    Klak, M. M.
    Zatryb, G.
    Golacki, L. W.
    Benzo, P.
    Labbe, C.
    Cardin, J.
    Misiewicz, J.
    Gourbilleau, F.
    Podhorodecki, A.
    THIN SOLID FILMS, 2019, 675 : 5 - 10
  • [29] Nanoindentation fracture and fatigue characterization of PECVD silicon nitride films subjected to rapid thermal annealing
    Huang, Zhi-Kai
    Chen, Kuo-Shen
    SENSORS AND ACTUATORS A-PHYSICAL, 2014, 207 : 49 - 60
  • [30] Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing
    Li Zhi-Gang
    Long Shi-Bing
    Liu Ming
    Wang Cong-Shun
    Jia Rui
    Lv Jin
    Shi Yi
    CHINESE PHYSICS, 2007, 16 (03): : 795 - 798
12345