Scanning rapid thermal annealing process for poly silicon thin film transistor

被引：5

作者：

Kim, TK ^{[1
]}

Kim, GB ^{[1
]}

Yoon, YG ^{[1
]}

Kim, CH ^{[1
]}

Lee, BI ^{[1
]}

Joo, SK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 10期

关键词：

polycrystalline; silicon; scan; rapid thermal annealing (RTA); thin film transistor (TFT); metal-induced lateral crystallization (MILC);

D O I：

10.1143/JJAP.39.5773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated on transparent glass substrates using lamp-scan rapid thermal annealing. Scan-radiation-annealed silicon islands were crystallized by metal-induced lateral crystallization (MILC). The activation energy of Ni-MILC was calculated to be 1.56 eV. In order to enhance the MILC rate, we deposited a capping SiO2 layer over the self-aligned TFT, which was found to increase the MILC rate several times. Thus fabricated TFTs exhibited different electrical characteristics depending on the annealing conditions.

引用

页码：5773 / 5775

页数：3

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