Scanning rapid thermal annealing process for poly silicon thin film transistor

Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated on transparent glass substrates using lamp-scan rapid thermal annealing. Scan-radiation-annealed silicon islands were crystallized by metal-induced lateral crystallization (MILC). The activation energy of Ni-MILC was calculated to be 1.56 eV. In order to enhance the MILC rate, we deposited a capping SiO2 layer over the self-aligned TFT, which was found to increase the MILC rate several times. Thus fabricated TFTs exhibited different electrical characteristics depending on the annealing conditions.