Growth of polarity-controlled ZnO films on (0001) Al2O3

被引：11
|
作者：
Park, J. S. [1 ]
Chang, J. H. [2 ]
Minegishi, T. [1 ]
Lee, H. J. [1 ]
Park, S. H. [1 ]
Im, I. H. [1 ]
Hanada, T. [1 ]
Hong, S. K. [3 ]
Cho, M. W. [1 ,4 ]
Yao, T. [1 ,4 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 980, Japan
[2] Korea Maritime Univ, Pusan, South Korea
[3] Chungnam Natl Univ, Dept Nano Informat Syst Engn, Taejon, South Korea
[4] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 980, Japan
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 05期
关键词：
polarity; PPZnO; interface; ZnO; nitrides; buffer layers;
D O I：
10.1007/s11664-007-0350-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The polarity control of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular-beam epitaxy (P-MBE) was achieved by using a novel CrN buffer layer. Zn-polar ZnO films were obtained by using a Zn-terminated CrN buffer layer, while O-polar ZnO films were achieved by using a Cr2O3 layer formed by O-plasma exposure of a CrN layer. The mechanism of polarity control was proposed. Optical and structural quality of ZnO films was characterized by high-resolution X-ray diffraction and photoluminescence (PL) spectroscopy. Low-temperature PL spectra of Zn-polar and O-polar samples show dominant bound exciton (I-8) and strong free exciton emissions. Finally, one-dimensional periodic structures consisting of Zn-polar and O-polar ZnO films were simultaneously grown on the same substrate. The periodic inversion of polarity was confirmed in terms of growth rate, surface morphology, and piezo response microscopy (PRM) measurement.
引用
收藏
页码：736 / 742
页数：7
相关论文
共 50 条
  • [41] Structural characterization of NiO films on Al2O3(0001)
    Mocuta, C
    Barbier, A
    Renaud, G
    Samson, Y
    Noblet, M
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 211 (1-3) : 283 - 290
  • [42] Properties of ferroelectric Pb(ZrTi)O3 thin films on ZnO/Al2O3 (0001) epilayers
    Chen, DY
    Murphy, TE
    Phillips, JD
    THIN SOLID FILMS, 2005, 491 (1-2) : 301 - 304
  • [43] Effects of grid bias on ZnO/α-Al2O3(0001) heteroepitaxy
    Doh, SJ
    Park, SI
    Cho, TS
    Je, JH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (05): : 3003 - 3007
  • [44] Effects of atomic defects of α-Al2O3(0001) on ZnO adsorption
    Chun, Y
    Li, YR
    Yan, QL
    Liu, YH
    ACTA PHYSICA SINICA, 2005, 54 (05) : 2364 - 2368
  • [45] Epitaxial growth of single-crystalline Al2O3 films on Cr2O3(0001)
    Dumbuya, Karifala
    Christmann, Klaus
    Schroeder, Sven L. M.
    LANGMUIR, 2007, 23 (10) : 5386 - 5393
  • [46] Buffer-free epitaxial growth of ZnO(0001) thin films at room temperature by tetramethylammonium hydroxide pretreatment of ¡-Al2O3(0001) substrates
    Kaneko, Kenta
    Oga, Tomoaki
    Kaneko, Satoru
    Katase, Takayoshi
    Yoshimoto, Mamoru
    Matsuda, Akifumi
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2023, 131 (08) : 383 - 388
  • [47] Growth of high-quality ZnO films on Al2O3 (0001) by plasma-assisted molecular beam epitaxy
    Park, J. S.
    Hong, S. K.
    Im, I. H.
    Ha, J. S.
    Lee, H. J.
    Park, S. H.
    Chang, J. H.
    Cho, M. W.
    Yao, T.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 2163 - 2166
  • [48] Heteroepitaxial growth behavior of Mn-doped ZnO thin films on Al2O3 (0001) by pulsed laser deposition
    Kim, SS
    Moon, JH
    Lee, BT
    Song, OS
    Je, JH
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) : 454 - 459
  • [49] Growth of high-quality epitaxial ZnO films on α-Al2O3
    Fons, P
    Iwata, K
    Niki, S
    Yamada, A
    Matsubara, K
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 627 - 632
  • [50] Effect of ultrathin buffer on the microstructure of highly mismatched epitaxial ZnO films on Al2O3(0001)
    Kim, In-Woo
    Lee, Kyu-Mann
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (07)
12345